Another way to speed the base transit time of this type of transistor is to vary the band gap across the base, e.g. in the SiGe [epitaxial base] BJT the base of Si1−ηGeη can be grown with η approx 0.2 by the collector and reducing to 0 near the emitter (keeping the dopant concentration constant).3: 307
Germanium diffused junction transistors were used by IBM in their Saturated Drift Transistor Resistor Logic (SDTRL), used in the IBM 1620. (Announced Oct 1959)
Bipolar Transistor. Chenning http://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch8.pdf ↩
Fundamentals of Semiconductor Devices. https://books.google.com/books?id=REQkwBF4cVoC&dq=drift-field+transistor&pg=PA469 ↩