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Gallium indium arsenide antimonide phosphide
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<h2 id="see-also">See also</h2> <ul><li><a href="/facts/Aluminium_gallium_phosphide/uHgqQ0hJ">Aluminium gallium phosphide</a></li> <li><a href="/facts/Aluminium_gallium_indium_phosphide/oSLRtLt3">Aluminium gallium indium phosphide</a></li> <li><a href="/facts/Indium_gallium_arsenide_phosphide/VbWMvvyh">Indium gallium arsenide phosphide</a></li> <li><a href="/facts/Indium_arsenide_antimonide_phosphide/B8Qe2uBB">Indium arsenide antimonide phosphide</a></li> <li><a href="/facts/Indium_gallium_arsenide_antimonide/kVRzI39d">Indium gallium arsenide antimonide</a></li></ul> <h2 id="references">References</h2> <ol> <li id="fn:1"><p>Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes, A. Krier, V. M. Smirnov, P. J. Batty, V. I. Vasil’ev, G. S. Gagis, and V. I. Kuchinskii, Appl. Phys. Lett. vol. 90 pp. 211115 (2007) doi:10.1063/1.2741147 <a href="/wiki/Doi_(identifier)" target="_blank">/wiki/Doi_(identifier)</a> <a href="#fnref:1" class="footnote-back-ref">↩</a></p></li> <li id="fn:2"><p>Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics, M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov and E. A. Kognovitskaya, Semiconductors vol. 36 num. 8 pp. 944-949 (2002) doi:10.1134/1.1500478 <a href="/wiki/Doi_(identifier)" target="_blank">/wiki/Doi_(identifier)</a> <a href="#fnref:2" class="footnote-back-ref">↩</a></p></li> <li id="fn:3"><p>Low Bandgap GaInAsSbP Pentanary Thermophotovoltaic Diodes, K. J. Cheetham, P. J. Carrington, N. B. Cook and A. Krier, Solar Energy Materials and Solar Cells, vol. 95 pp. 534-537 (2011) doi:10.1016/j.solmat.2010.08.036 <a href="/wiki/Doi_(identifier)" target="_blank">/wiki/Doi_(identifier)</a> <a href="#fnref:3" class="footnote-back-ref">↩</a></p></li> <li id="fn:4"><p>Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics, M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov and E. A. Kognovitskaya, Semiconductors vol. 36 num. 8 pp. 944-949 (2002) doi:10.1134/1.1500478 <a href="/wiki/Doi_(identifier)" target="_blank">/wiki/Doi_(identifier)</a> <a href="#fnref:4" class="footnote-back-ref">↩</a></p></li> </ol>