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Gallium antimonide
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<h2 id="history">History</h2> <p>The intermetallic compound GaSb was first prepared in 1926 by <a href="/facts/Victor_Goldschmidt/50GFw2Pl">Victor Goldschmidt</a>, who directly combined the elements under an inert gas atmosphere and reported on GaSb's lattice constant, which has since been revised. Goldschmidt also synthesized <a href="/facts/Gallium_phosphide/DAFg8pfj">gallium phosphide</a> and <a href="/facts/Gallium_arsenide/BakLFjpp">gallium arsenide</a>.<a class="footnote-ref" id="fnref:5" href="#fn:5"><sup>5</sup></a> The Ga-Sb phase equilibria was investigated in 1955 by Koster<a class="footnote-ref" id="fnref:6" href="#fn:6"><sup>6</sup></a> and by Greenfield.<a class="footnote-ref" id="fnref:7" href="#fn:7"><sup>7</sup></a> </p> <h2 id="applications">Applications</h2> <p>GaSb can be used for <a href="/facts/Infrared_detector/pK7SfsEv">Infrared detectors</a>, <a href="/facts/Infrared/44XdJNcc">infrared</a> <a href="/facts/LED/cMFILd4d">LEDs</a> and <a href="/facts/Semiconductor_laser/TjHzJteV">lasers</a> and <a href="/facts/Transistors/Bmr8zwL0">transistors</a>, and <a href="/facts/Thermophotovoltaic/kVRzI39d">thermophotovoltaic</a> systems. </p> <h2 id="see-also">See also</h2> <ul><li><a href="/facts/Aluminium_antimonide/HYqmGA72">Aluminium antimonide</a></li> <li><a href="/facts/Indium_antimonide/76EPwVLC">Indium antimonide</a></li> <li><a href="/facts/Gallium_arsenide/BakLFjpp">Gallium arsenide</a></li></ul> <h2 id="external-links">External links</h2> <ul><li><a href="http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaSb/">properties listed at NSM</a>, Ioffe Institute.</li> <li><a href="https://web.archive.org/web/20041025234936/http://www.onr.navy.mil/02/matoc/onr/docs/pa1/pa1_005.doc">National Compound Semiconductor Roadmap</a> at the <a href="/facts/Office_of_Naval_Research/qKug0oD2">Office of Naval Research</a></li></ul> <h2 id="references">References</h2> <ol> <li id="fn:1"><p>Vurgaftman, I., Meyer, J. R., Ram-Mohan, L. R. (2001). "Band parameters for III–V compound semiconductors and their alloys". Journal of Applied Physics. 89 (11): 5815–5875. Bibcode:2001JAP....89.5815V. doi:10.1063/1.1368156. <a href="/wiki/Bibcode_(identifier)" target="_blank">/wiki/Bibcode_(identifier)</a> <a href="#fnref:1" class="footnote-back-ref">↩</a></p></li> <li id="fn:2"><p>Vurgaftman, I., Meyer, J. R., Ram-Mohan, L. R. (2001). "Band parameters for III–V compound semiconductors and their alloys". Journal of Applied Physics. 89 (11): 5815–5875. Bibcode:2001JAP....89.5815V. doi:10.1063/1.1368156. <a href="/wiki/Bibcode_(identifier)" target="_blank">/wiki/Bibcode_(identifier)</a> <a href="#fnref:2" class="footnote-back-ref">↩</a></p></li> <li id="fn:3"><p>Dutta, P. S., Bhat, H. L., Kumar, V. (1997). "The physics and technology of gallium antimonide: An emerging optoelectronic material". Journal of Applied Physics. 81 (9): 5821–5870. Bibcode:1997JAP....81.5821D. doi:10.1063/1.365356. <a href="/wiki/Bibcode_(identifier)" target="_blank">/wiki/Bibcode_(identifier)</a> <a href="#fnref:3" class="footnote-back-ref">↩</a></p></li> <li id="fn:4"><p>Madelung, O., Rössler, U., Schulz, M., eds. (2002). "Gallium antimonide (GaSb), direct energy gap". Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties. Landolt-Börnstein - Group III Condensed Matter. Vol. b. Springer-Verlag. pp. 1–5. doi:10.1007/10832182_229. ISBN 978-3-540-42876-3. <a href="978-3-540-42876-3" target="_blank">978-3-540-42876-3</a> <a href="#fnref:4" class="footnote-back-ref">↩</a></p></li> <li id="fn:5"><p>Goldschmidt, Victor Moritz (1926). "Geochemische Verteilungsgesetze der Elemente : 7. Die Gesetze der Krystallochemie". Skrifter Norske Videnskaps-Akademi I Oslo (in German). I Kommission Hos Jacob Dybwad: 29. <a href="https://publikationen.ub.uni-frankfurt.de/frontdoor/index/index/docId/19275" target="_blank">https://publikationen.ub.uni-frankfurt.de/frontdoor/index/index/docId/19275</a> <a href="#fnref:5" class="footnote-back-ref">↩</a></p></li> <li id="fn:6"><p>Köster, Werner; Thoma, Berthold (1955-04-01). "Aufbau der Systeme Gallium-Antimon, Gallium-Arsen und Aluminium-Arsen". International Journal of Materials Research. 46 (4): 291–293. Bibcode:1955IJMR...46..291K. doi:10.1515/ijmr-1955-460408. ISSN 2195-8556. <a href="/wiki/Bibcode_(identifier)" target="_blank">/wiki/Bibcode_(identifier)</a> <a href="#fnref:6" class="footnote-back-ref">↩</a></p></li> <li id="fn:7"><p>Greenfield, I. G.; Smith, R. L. (1955). "Gallium-Antimony System". Transactions AIME. 7 (2): 351–353. Bibcode:1955JOM.....7..351G. doi:10.1007/BF03377506. ISSN 1047-4838. <a href="/wiki/Bibcode_(identifier)" target="_blank">/wiki/Bibcode_(identifier)</a> <a href="#fnref:7" class="footnote-back-ref">↩</a></p></li> </ol>