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Nanoionics
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<h2 id="characteristics">Characteristics</h2> <p>Being a branch of nanoscience and <a href="/facts/Nanotechnology/Co4FFNfY">nanotechnology</a>, nanoionics is unambiguously defined by its own objects (nanostructures with FIT), subject matter (properties, phenomena, effects, mechanisms of processes, and applications connected with FIT at nano-scale), method (interface design in nanosystems of superionic conductors), and the criterion (R/L ~1, where R is the length scale of device structures, and L is the characteristic length on which the properties, characteristics, and other parameters connected with FIT change drastically). </p><p>The <a href="/facts/International_Technology_Roadmap_for_Semiconductors/vD2UyM3h">International Technology Roadmap for Semiconductors</a> (ITRS) relates nanoionics-based resistive switching memories to the category of "emerging research devices" ("ionic memory"). The area of close intersection of nanoelectronics and nanoionics had been called nanoelionics (1996). Now, the vision of future nanoelectronics constrained solely by fundamental ultimate limits is being formed in advanced research.<a class="footnote-ref" id="fnref:11" href="#fn:11"><sup>11</sup></a><a class="footnote-ref" id="fnref:12" href="#fn:12"><sup>12</sup></a><a class="footnote-ref" id="fnref:13" href="#fn:13"><sup>13</sup></a><a class="footnote-ref" id="fnref:14" href="#fn:14"><sup>14</sup></a> The ultimate physical limits to computation<a class="footnote-ref" id="fnref:15" href="#fn:15"><sup>15</sup></a> are very far beyond the currently attained (1010 cm−2, 1010 Hz) region. What kind of logic switches might be used at the near nm- and sub-nm peta-scale integration? The question was the subject matter already in,<a class="footnote-ref" id="fnref:16" href="#fn:16"><sup>16</sup></a> where the term "nanoelectronics"<a class="footnote-ref" id="fnref:17" href="#fn:17"><sup>17</sup></a> was not used yet. Quantum mechanics constrains electronic distinguishable configurations by the tunneling effect at tera-scale. To overcome 1012 cm−2 bit density limit, atomic and ion configurations with a characteristic dimension of L <2 nm should be used in the information domain and materials with an effective mass of information carriers m* considerably larger than electronic ones are required: m* =13 me at L =1 nm, m* =53 me (L =0,5 nm) and m* =336 me (L =0,2 nm).<a class="footnote-ref" id="fnref:18" href="#fn:18"><sup>18</sup></a> Future short-sized devices may be nanoionic, i.e. based on the fast-ion transport at the nanoscale, as it was first stated in.<a class="footnote-ref" id="fnref:19" href="#fn:19"><sup>19</sup></a> </p> <h2 id="examples">Examples</h2> <p>The examples of <a href="/facts/Nanoionic_device/DNFRWGVT">nanoionic devices</a> are all-solid-state <a href="/facts/Supercapacitor/JuJDlQCA">supercapacitors</a> with fast-ion transport at the functional heterojunctions (<a href="/facts/Nanoionic_supercapacitor/DNFRWGVT">nanoionic supercapacitors</a>),<a class="footnote-ref" id="fnref:20" href="#fn:20"><sup>20</sup></a><a class="footnote-ref" id="fnref:21" href="#fn:21"><sup>21</sup></a> lithium batteries and fuel cells with nanostructured electrodes,<a class="footnote-ref" id="fnref:22" href="#fn:22"><sup>22</sup></a> nano-switches with quantized conductivity on the basis of fast-ion conductors<a class="footnote-ref" id="fnref:23" href="#fn:23"><sup>23</sup></a><a class="footnote-ref" id="fnref:24" href="#fn:24"><sup>24</sup></a> (see also <a href="/facts/Memristors/BrFKeE7l">memristors</a> and <a href="/facts/Programmable_metallization_cell/IArHNEkk">programmable metallization cell</a>). These are well compatible with sub-voltage and <a href="/facts/Deep-sub-voltage_nanoelectronics/9VjBYWNv">deep-sub-voltage nanoelectronics</a><a class="footnote-ref" id="fnref:25" href="#fn:25"><sup>25</sup></a> and could find wide applications, for example in autonomous <a href="/facts/Micro_power_source/JoPJopuD">micro power sources</a>, <a href="/facts/RFID/4CnmIV2b">RFID</a>, <a href="/facts/Microelectromechanical_systems/TkhEzDpm">MEMS</a>, <a href="/facts/Smartdust/4X9Dhdxe">smartdust</a>, <a href="/facts/Nanomorphic_cell/4ATnEccd">nanomorphic cell</a>, other micro- and <a href="/facts/Nanosystems/1RRBxrjH">nanosystems</a>, or reconfigurable <a href="/facts/Computer_data_storage/wPHKFpdx">memory cell</a> arrays. </p><p>An important case of fast-ionic conduction in solid states is in the surface space-charge layer of ionic crystals. Such conduction was first predicted by <a href="/facts/Kurt_Lehovec/GVorVQnT">Kurt Lehovec</a>.<a class="footnote-ref" id="fnref:26" href="#fn:26"><sup>26</sup></a> A significant role of boundary conditions with respect to ionic conductivity was first experimentally discovered by C.C. Liang<a class="footnote-ref" id="fnref:27" href="#fn:27"><sup>27</sup></a> who found an anomalously high conduction in the LiI-Al2O3 two-phase system. Because a space-charge layer with specific properties has nanometer thickness, the effect is directly related to nanoionics (nanoionics-I). The <a href="/facts/Kurt_Lehovec/GVorVQnT">Lehovec effect</a> has become the basis for the creation of a multitude of nanostructured <a href="/facts/Fast-ion_conductor/oE9l9Em6">fast-ion conductors</a> which are used in modern portable <a href="/facts/Lithium_battery/D5yfo8XS">lithium batteries</a> and <a href="/facts/Fuel_cell/UcMYnCW3">fuel cells</a>. In 2012, a 1D structure-dynamic approach was developed in nanoionics<a class="footnote-ref" id="fnref:28" href="#fn:28"><sup>28</sup></a><a class="footnote-ref" id="fnref:29" href="#fn:29"><sup>29</sup></a><a class="footnote-ref" id="fnref:30" href="#fn:30"><sup>30</sup></a> for a detailed description of the space charge formation and relaxation processes in irregular potential relief (direct problem) and interpretation of characteristics of nanosystems with fast-ion transport (inverse problem), as an example, for the description of a collective phenomenon: coupled ion transport and dielectric-polarization processes which lead to <a href="/facts/A._K._Jonscher/sGArT0IE">A. K. Jonscher</a>'s "universal" dynamic response. </p> <h2 id="see-also">See also</h2> <ul><li><a href="/facts/Programmable_metallization_cell/IArHNEkk">Programmable metallization cell</a></li></ul> <h2 id="references">References</h2> <ol> <li id="fn:1"><p>Despotuli, A.L.; Nikolaichic V.I. (1993). 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Ionics. 22 (8): 1291–1298. doi:10.1007/s11581-016-1668-3. S2CID 100727969. <a href="/w/index.php?title=Ionics&action=edit&redlink=1" target="_blank">/w/index.php?title=Ionics&action=edit&redlink=1</a> <a href="#fnref:30" class="footnote-back-ref">↩</a></p></li> </ol>