Gallium(I) oxide

<h2 id="production">Production</h2>
<p>Gallium(I) oxide can be produced by reacting <a href="/facts/Gallium(III)_oxide/PnUPcUVc">gallium(III) oxide</a> with heated <a href="/facts/Gallium/EucevDs9">gallium</a> in vacuum:<a class="footnote-ref" id="fnref:1" href="#fn:1"><sup>1</sup></a>
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    {\displaystyle \mathrm {Ga_{2}O_{3}+4\ Ga\longrightarrow 3\ Ga_{2}O} }

<p>It can also be obtained by reacting gallium with <a href="/facts/Carbon_dioxide/xGzpppEp">carbon dioxide</a> in vacuum at 850 °C.<a class="footnote-ref" id="fnref:2" href="#fn:2"><sup>2</sup></a>
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    {\displaystyle \mathrm {2\ Ga+CO_{2}\longrightarrow Ga_{2}O+CO} }

<p>Gallium(I) oxide is a by-product in the production of <a href="/facts/Gallium_arsenide/BakLFjpp">gallium arsenide</a> wafers:<a class="footnote-ref" id="fnref:3" href="#fn:3"><sup>3</sup></a><a class="footnote-ref" id="fnref:4" href="#fn:4"><sup>4</sup></a>
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    {\displaystyle \mathrm {4\ Ga+SiO_{2}\longrightarrow 2\ Ga_{2}O+Si} }

<h2 id="properties">Properties</h2>
<p>Gallium(I) oxide is a brown-black <a href="/facts/Diamagnetic/dgFavn9K">diamagnetic</a> solid which is resistant to further oxidation in dry air. It starts decomposing upon heating at temperatures above 500 °C, and the decomposition rate depends on the atmosphere (vacuum, inert gas, air).<a class="footnote-ref" id="fnref:5" href="#fn:5"><sup>5</sup></a>
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<h2 id="references">References</h2>

<ol>
<li id="fn:1"><p>Brauer, Georg (1975). Handbuch der Präparativen Anorganischen Chemie. Vol. 3. F. Enke. p. 857. ISBN 3-432-02328-6. <a href="3-432-02328-6" target="_blank">3-432-02328-6</a> <a href="#fnref:1" class="footnote-back-ref">↩</a></p></li>
<li id="fn:2"><p>Emeléus, H. J. and Sharpe, A. G. (1963). Advances in Inorganic Chemistry and Radiochemistry. Vol. 5. Academic Press. p. 94. ISBN 008057854-3.{{cite book}}:  CS1 maint: multiple names: authors list (link) <a href="008057854-3" target="_blank">008057854-3</a> <a href="#fnref:2" class="footnote-back-ref">↩</a></p></li>
<li id="fn:3"><p>Siffert, Paul and Krimmel, Eberhard (2004). Silicon: Evolution and Future of a Technology. Springer. p. 439. ISBN 354040546-1.{{cite book}}:  CS1 maint: multiple names: authors list (link)
 <a href="354040546-1" target="_blank">354040546-1</a> <a href="#fnref:3" class="footnote-back-ref">↩</a></p></li>
<li id="fn:4"><p>Chou, L. -J (2007). Nanoscale One-dimensional Electronic and Photonic Devices (NODEPD). The Electrochemical Society. p. 47. ISBN 978-156677574-8. <a href="978-156677574-8" target="_blank">978-156677574-8</a> <a href="#fnref:4" class="footnote-back-ref">↩</a></p></li>
<li id="fn:5"><p>Brauer, Georg (1975). Handbuch der Präparativen Anorganischen Chemie. Vol. 3. F. Enke. p. 857. ISBN 3-432-02328-6. <a href="3-432-02328-6" target="_blank">3-432-02328-6</a> <a href="#fnref:5" class="footnote-back-ref">↩</a></p></li>
</ol>

Gallium(I) oxide open-in-new

Gallium(I) oxide