Indium gallium arsenide phosphide

<h2 id="see-also">See also</h2>
<ul><li><a href="/facts/Indium_gallium_phosphide/b2CSPAgP">Indium gallium phosphide</a></li>
<li><a href="/facts/Gallium_indium_arsenide_antimonide_phosphide/3yahvnsC">Gallium indium arsenide antimonide phosphide</a></li>
<li><a href="/facts/Solar_cell_efficiency/Au9KQeed">Solar cell efficiency</a></li></ul>

<h2 id="external-links">External links</h2>
<ul><li><a href="http://www.ioffe.ru/SVA/NSM/Semicond/GaInAsP/">Physical properties of gallium arsenide phosphide</a></li></ul>

<h2 id="references">References</h2>

<ol>
<li id="fn:1"><p>Bellini, Emiliano (April 23, 2021). "Fraunhofer ISE achieves 35.9% efficiency for III-V triple-junction solar cell based on silicon". pv magazine. <a href="https://www.pv-magazine.com/2021/04/23/fraunhofer-ise-achieves-35-9-efficiency-for-iii-v-triple-junction-solar-cell-based-on-silicon/" target="_blank">https://www.pv-magazine.com/2021/04/23/fraunhofer-ise-achieves-35-9-efficiency-for-iii-v-triple-junction-solar-cell-based-on-silicon/</a> <a href="#fnref:1" class="footnote-back-ref">↩</a></p></li>
<li id="fn:2"><p>"Tandem Photovoltaics Enables New Heights in Solar Cell Efficiencies – 35.9 % for III-V // Silicon Solar Cell". Fraunhofer Institute for Solar Energy Systems ISE. April 23, 2021. <a href="https://www.ise.fraunhofer.de/en/press-media/press-releases/2021/tandem-photovoltaics-enables-new-heights-in-solar-cell-efficiencies-35point9-percent-for-iii-v-silicon-solar-cell.html" target="_blank">https://www.ise.fraunhofer.de/en/press-media/press-releases/2021/tandem-photovoltaics-enables-new-heights-in-solar-cell-efficiencies-35point9-percent-for-iii-v-silicon-solar-cell.html</a> <a href="#fnref:2" class="footnote-back-ref">↩</a></p></li>
</ol>

Indium gallium arsenide phosphide open-in-new

Indium gallium arsenide phosphide