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Indium gallium zinc oxide
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<h2 id="fabrication-process">Fabrication process</h2> <p>The current impediment to large-scale IGZO manufacturing is the synthesis method. The most widely used technique for transparent conducting oxide (TCO) synthesis is <a href="/facts/Pulsed_laser_deposition/YaF3a2XG">pulsed laser deposition</a> (PLD).<a class="footnote-ref" id="fnref:17" href="#fn:17"><sup>17</sup></a> In PLD, a <a href="/facts/Laser/jk6PTvvT">laser</a> is used to focus on nano-sized spots on solid elemental targets. Laser pulse frequencies are varied between the targets in ratios to control the composition of the film. IGZO can be deposited onto <a href="/facts/Substrate_(chemistry)/6MnaV19h">substrates</a> such as quartz, single-crystal silicon, or even plastic due to its ability for low-temperature deposition. The substrates are placed in a PLD vacuum chamber, which controls oxygen pressure in order to ensure favorable electrical properties. After synthesis, the film is <a href="/facts/Annealing_(metallurgy)/2AfoCE4X">annealed</a>, or gradually exposed to air to adjust to the atmosphere. </p><p>While PLD is a useful and versatile synthesis technique, it requires expensive equipment and plenty of time for each sample to adjust to regular atmospheric conditions. This is not ideal for industrial manufacturing. </p><p>An alternative method to fabricate IGZO thin films with higher precision and scalability is the <a href="/facts/Plasma_(physics)/1d3btMVU">plasma</a>-enhanced <a href="/facts/Atomic_layer_deposition/NWFrQIHC">atomic layer deposition</a> (PEALD) process. ALD is a precisely controlled <a href="/facts/Chemical_vapor_deposition/7khLxeU5">chemical vapor deposition</a> technique that deposits thin films layer by layer using gas <a href="/facts/Precursor_(chemistry)/dUw8Mx2Y">precursors</a>. In PEALD, the addition of a remote plasma source allows the precursor molecules to break down in the plasma, reducing reliance on thermal energy from the heated substrate and allowing for greater process flexibility.<a class="footnote-ref" id="fnref:18" href="#fn:18"><sup>18</sup></a> </p><p>Solution processing is a more cost effective alternative. Specifically, combustion synthesis techniques can be used. Kim et al. used a metal nitrate solution with an oxidizer to create an <a href="/facts/Exothermic/gCuSvpa4">exothermic</a> reaction.<a class="footnote-ref" id="fnref:19" href="#fn:19"><sup>19</sup></a> One common type of combustion synthesis is <a href="/facts/Spin_coating/IsgQN2nK">spin coating</a>,<a class="footnote-ref" id="fnref:20" href="#fn:20"><sup>20</sup></a> which involves depositing In and Ga solution layers onto a hot plate and annealing at temperatures roughly between 200 and 400 degrees C, depending on the target composition. 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