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Optical beam-induced current
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<h2 id="uses">Uses</h2> <p>The technique is used in semiconductor <a href="/facts/Failure_analysis/C5MVRgn6">failure analysis</a> to locate buried diffusion regions, damaged junctions and gate oxide shorts.<a class="footnote-ref" id="fnref:1" href="#fn:1"><sup>1</sup></a> </p><p>The OBIC technique may be used to detect the point at which a focused ion beam (FIB) milling operation in bulk silicon of an IC must be terminated (also known as endpoint). This is accomplished by using a laser to induce a photocurrent in the silicon while simultaneously monitoring the magnitude of the photocurrent by connecting an ammeter to the device's power and ground. As the bulk silicon is thinned, the photocurrent is increased and reaches a peak as the depletion region of the well to substrate junction is reached. This way, endpoint can be achieved to just below the well depth and the device remains operational.<a class="footnote-ref" id="fnref:2" href="#fn:2"><sup>2</sup></a> </p> <h2 id="see-also">See also</h2> <ul><li><a href="/facts/List_of_laser_articles/pV4G2xvW">List of laser articles</a></li></ul> <h2 id="notes">Notes</h2> <ul><li>Cole, Ed; et al. (2004), "Beam-Based Defect Localization Methods", <i>Microelectronics Failure Analysis</i>, Materials Park: ASM International, <a href="/facts/ISBN_(identifier)/15AdSPa9">ISBN</a> 0-87170-804-3.</li> <li>Antoniou, Nicholas (2004), "The Process of Editing Circuits Through the Bulk Silicon", <i>Microelectronics Failure Analysis</i>, Materials Park: ASM International, <a href="/facts/ISBN_(identifier)/15AdSPa9">ISBN</a> 0-87170-804-3.</li></ul> <h2 id="further-reading">Further reading</h2> <ul><li>Manfred Frischholz; Jörg Seidel; Adolf Schoner; Ulf Gustafsson; Mietek Bakowski; Kenneth Nordgren; Kurt Rottner (1998), "JTE concept evaluation and failure analysis: OBIC measurements on 4H Sic p+-n diodes", <i>Proceedings of 1998 International Symposium on Power Semiconductor Devices & ICs, Kyoto</i>: 391–394.</li></ul> <h2 id="references">References</h2> <ol> <li id="fn:1"><p>Cole 2004, p. 411 - Cole, Ed; et al. (2004), "Beam-Based Defect Localization Methods", Microelectronics Failure Analysis, Materials Park: ASM International, ISBN 0-87170-804-3 <a href="#fnref:1" class="footnote-back-ref">↩</a></p></li> <li id="fn:2"><p>Antoniou 2004, p. 72 - Antoniou, Nicholas (2004), "The Process of Editing Circuits Through the Bulk Silicon", Microelectronics Failure Analysis, Materials Park: ASM International, ISBN 0-87170-804-3 <a href="#fnref:2" class="footnote-back-ref">↩</a></p></li> </ol>