Floating-gate MOSFET

<p>The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of <a href="/facts/Metal%25E2%2580%2593oxide%25E2%2580%2593semiconductor_field-effect_transistor/eTDJT2Km">metal–oxide–semiconductor field-effect transistor</a> (MOSFET) where the gate is electrically isolated, creating a floating node in <a href="/facts/Direct_current/r9MNUx84">direct current</a>, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only <a href="/facts/Capacitive_coupling/7m9pjCPF">capacitively</a> connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, typically longer than 10 years in modern devices. Usually <a href="/facts/Field_electron_emission/ReNmucpE">Fowler-Nordheim tunneling</a> and <a href="/facts/Hot-carrier_injection/INtYL36b">hot-carrier injection</a> mechanisms are used to modify the amount of charge stored in the FG.
</p><p>The FGMOS is commonly used as a floating-gate <a href="/facts/Memory_cell_(computing)/beKH6ous">memory cell</a>, the <a href="/facts/Computer_memory/hQKVQ51J">digital storage</a> element in <a href="/facts/EPROM/kXcEca36">EPROM</a>, <a href="/facts/EEPROM/0yAMFY0I">EEPROM</a> and <a href="/facts/Flash_memory/Cn8JsStx">flash memory</a> technologies. Other uses of the FGMOS include a neuronal computational element in <a href="/facts/Neural_network/6V1jMlkx">neural networks</a>, analog storage element, <a href="/facts/Digital_potentiometer/TIw01dmk">digital potentiometers</a> and single-transistor <a href="/facts/Digital-to-analog_converter/5loEvAeb">DACs</a>.
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Floating-gate MOSFET open-in-new

Floating-gate MOSFET