Indium arsenide

Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap <a href="/facts/Semiconductor/zFf3mGTE">semiconductor</a> composed of <a href="/facts/Indium/zRq3stVb">indium</a> and <a href="/facts/Arsenic/k1c4f44D">arsenic</a>. It has the appearance of grey <a href="/facts/Cubic_crystal/92Co7BKM">cubic crystals</a> with a melting point of 942 °C.
Indium arsenide is similar in properties to <a href="/facts/Gallium_arsenide/BakLFjpp">gallium arsenide</a> and is a <a href="/facts/Direct_bandgap/9T1kkc6y">direct bandgap</a> material, with a bandgap of 0.35 eV at room temperature.
Indium arsenide is used for the construction of <a href="/facts/Infrared_detector/pK7SfsEv">infrared detectors</a>, for the <a href="/facts/Wavelength/kcJU0ymz">wavelength</a> range of 1.0–3.8 μm. The detectors are usually <a href="/facts/Photovoltaic/5Xefaayl">photovoltaic</a> <a href="/facts/Photodiode/152Rpk06">photodiodes</a>. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making <a href="/facts/Diode_laser/TjHzJteV">diode lasers</a>.
InAs is well known for its high electron mobility and narrow energy bandgap. It is widely used as a <a href="/facts/Terahertz_radiation/729QecPK">terahertz radiation</a> source as it is a strong <a href="/facts/Photo-Dember/3tdGnEww">photo-Dember</a> emitter.
<a href="/facts/Quantum_dot/K5Ytv8Yw">Quantum dots</a> can be formed in a monolayer of indium arsenide on <a href="/facts/Indium_phosphide/IEW8ApM2">indium phosphide</a> or gallium arsenide. The mismatches of <a href="/facts/Lattice_constant/h3gMKk6V">lattice constants</a> of the materials create tensions in the surface layer, which in turn leads to the formation of the quantum dots. Quantum dots can also be formed in indium gallium arsenide, as indium arsenide dots sitting in the gallium arsenide matrix.

Indium arsenide open-in-new

Indium arsenide