Metalorganic vapour-phase epitaxy

<p>Metalorganic vapour-phase epitaxy (MOVPE), also known as <a href="/facts/Organometallic/bhqFz2P0">organometallic</a> vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a <a href="/facts/Chemical_vapour_deposition/7khLxeU5">chemical vapour deposition</a> method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures.  In contrast to <a href="/facts/Molecular-beam_epitaxy/zIhe0lMv">molecular-beam epitaxy</a> (MBE), the growth of <a href="/facts/Crystals/e2R2mk3E">crystals</a> is by chemical reaction and not physical deposition.  This takes place not in <a href="/facts/Vacuum/BTk3goyV">vacuum</a>, but from the <a href="/facts/Gas/hVVAoodV">gas</a> phase at moderate <a href="/facts/Pressure/eyc37GRG">pressures</a> (10 to 760 <a href="/facts/Torr_(unit)/Y83YBu34">Torr</a>). As such, this technique is preferred for the formation of devices incorporating thermodynamically <a href="/facts/Phases_of_matter/NkHXDdN3">metastable</a> alloys, and it has become a major process in the manufacture of <a href="/facts/Optoelectronics/0SCr9px0">optoelectronics</a>, such as <a href="/facts/Light-emitting_diodes/gE8x4MDb">light-emitting diodes</a>, its most widespread application. It was first demonstrated in 1967 at <a href="/facts/North_American_Aviation/zY6IG0pa">North American Aviation</a> (later <a href="/facts/Rockwell_International/dPSf6G1b">Rockwell International</a>) Autonetics Division in Anaheim CA by <a href="/facts/Harold_M._Manasevit/g32I9QQ8">Harold M. Manasevit</a>.
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Metalorganic vapour-phase epitaxy open-in-new

Metalorganic vapour-phase epitaxy