Stacking-fault energy

<p>The stacking-fault energy (SFE) is a materials property on a very small scale. It is noted as γSFE in units of energy per area.
</p><p>A <a href="/facts/Stacking_fault/nxrIYeIn">stacking fault</a> is an interruption of the normal stacking sequence of atomic planes in a close-packed <a href="/facts/Crystal_structure/bJ4bCeHd">crystal structure</a>. These interruptions carry a certain stacking-fault energy. The width of stacking fault is a consequence of the balance between the repulsive force between two partial <a href="/facts/Dislocation/m1tkJYIq">dislocations</a> on one hand and the attractive force due to the <a href="/facts/Surface_tension/EuluYmSM">surface tension</a> of the stacking fault on the other hand. The equilibrium width is thus partially determined by the stacking-fault energy. When the SFE is high the dissociation of a full dislocation into two partials is energetically unfavorable, and the material can deform either by dislocation glide or cross-slip. Lower SFE materials display wider stacking faults and have more difficulties for cross-slip.
The SFE modifies the ability of a dislocation in a <a href="/facts/Crystal/e2R2mk3E">crystal</a> to glide onto an intersecting <a href="/facts/Slip_(materials_science)/P29xbKBu">slip plane</a>.
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<table><tbody><tr><th>Material</th><th>Brass</th><th>Stainless Steel</th><th>Ag (<a href="/facts/Silver/xXe41BGg">Silver</a>)</th><th><a href="/facts/Gold/1znknojp">Au</a></th><th>Si (<a href="/facts/Silicon/cgWx0hdr">Silicon</a>)</th><th>Ni (<a href="/facts/Nickel/KwMCHYRP">Nickel</a>)</th><th>Cu (<a href="/facts/Copper/I8PEE8oX">Copper</a>)</th><th>Mg (<a href="/facts/Magnesium/XyIhd2FG">Magnesium</a>)</th><th>Al (<a href="/facts/Aluminum/7wmR8jYE">Aluminum</a>)</th></tr><tr><th>SFE (<a href="/facts/Millijoule/9ndq9jD2">mJ</a> m−2)</th><td><10</td><td><10</td><td>25</td><td>75</td><td>>42</td><td>90 </td><td>70 -78</td><td>125 </td><td>160-250 </td></tr></tbody></table>

Stacking-fault energy open-in-new

Stacking-fault energy