Plasma-enhanced chemical vapor deposition

<p>Plasma-enhanced chemical vapor deposition (PECVD) is a <a href="/facts/Chemical_vapor_deposition/7khLxeU5">chemical vapor deposition</a> process used to deposit thin films from a <a href="/facts/Gas/hVVAoodV">gas</a> state (<a href="/facts/Vapor/PLlojGug">vapor</a>) to a <a href="/facts/Solid/hj5UsXno">solid</a> state on a <a href="/facts/Substrate_(materials_science)/LwwkV6rX">substrate</a>. <a href="/facts/Chemical_reaction/GpqWlKrz">Chemical reactions</a> are involved in the process, which occur after creation of a <a href="/facts/Plasma_(physics)/1d3btMVU">plasma</a> of the reacting gases. The <a href="/facts/Plasma_(physics)/1d3btMVU">plasma</a> is generally created by <a href="/facts/Radio_frequency/aWku7h4R">radio frequency</a> (RF) <a href="/facts/Alternating_current/qxICS3xa">alternating current</a> (AC) frequency or <a href="/facts/Direct_current/r9MNUx84">direct current</a> (DC) discharge between two <a href="/facts/Electrode/251PaKX8">electrodes</a>, the space between which is filled with the reacting gases.
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Plasma-enhanced chemical vapor deposition open-in-new

Plasma-enhanced chemical vapor deposition