Gallium(III) oxide

<p>Gallium(III) oxide is an <a href="/facts/Inorganic_compound/TfFfzxSz">inorganic compound</a> and <a href="/facts/Wide-bandgap_semiconductor/UdF7rCrp">ultra-wide-bandgap semiconductor</a> with the formula <a href="/facts/Gallium/EucevDs9">Ga2</a><a href="/facts/Trioxide/NTsylMCE">O3</a>. It is actively studied for applications in <a href="/facts/Power_electronics/8BAQ3jDP">power electronics</a>, <a href="/facts/Phosphor/vTLjrGDE">phosphors</a>, and <a href="/facts/Gas_detector/QHH5sQgp">gas sensing</a>. The compound has several <a href="/facts/Polymorphism_(materials_science)/bu2tqsB9">polymorphs</a>, of which the <a href="/facts/Monoclinic_crystal_system/5PCwXvzX">monoclinic</a> β-phase is the most stable. The β-phase’s <a href="/facts/Bandgap/IjIeh95l">bandgap</a> of 4.7–4.9 eV and large-area, native substrates make it a promising competitor to <a href="/facts/Gallium_nitride/lmwUt4nk">GaN</a> and <a href="/facts/Silicon_carbide/kQLVAYbr">SiC</a>-based power electronics applications and <a href="/facts/Solar-blind_technology/trEER6aL">solar-blind</a> UV <a href="/facts/Photodetector/7cSkXS6s">photodetectors.</a> The orthorhombic ĸ-<a href="/facts/Gallium/EucevDs9">Ga2</a><a href="/facts/Trioxide/NTsylMCE">O3</a> is the second most stable polymorph. The ĸ-phase has shown instability of subsurface doping density under thermal exposure. Ga2O3 exhibits reduced thermal conductivity and electron mobility by an order of magnitude compared to <a href="/facts/Gallium_nitride/lmwUt4nk">GaN</a> and <a href="/facts/Silicon_carbide/kQLVAYbr">SiC</a>, but is predicted to be significantly more cost-effective due to being the only wide-bandgap material capable of being grown from melt. β-Ga2O3 is thought to be <a href="/facts/Radiation_hardening/nB4Wbctl">radiation-hard</a>, which makes it promising for military and space applications.
</p>

Gallium(III) oxide open-in-new

Gallium(III) oxide