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Indium gallium arsenide phosphide
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<p>Indium gallium arsenide phosphide (<a href="/facts/Gallium/EucevDs9">Ga</a><i>x</i><a href="/facts/Indium/zRq3stVb">In</a>1−<i>x</i><a href="/facts/Arsenic/k1c4f44D">As</a><i>y</i><a href="/facts/Phosphorus/27xCeIqs">P</a>1−<i>y</i>) is a <a href="/facts/Quaternary_compound/W1Rc9cto">quaternary compound</a> <a href="/facts/Semiconductor_material/zFf3mGTE">semiconductor material</a>, an alloy of <a href="/facts/Gallium_arsenide/BakLFjpp">gallium arsenide</a>, <a href="/facts/Gallium_phosphide/DAFg8pfj">gallium phosphide</a>, <a href="/facts/Indium_arsenide/GMhtPVbU">indium arsenide</a>, or <a href="/facts/Indium_phosphide/IEW8ApM2">indium phosphide</a>. This compound has applications in photonic devices, due to the ability to tailor its <a href="/facts/Band_gap/IjIeh95l">band gap</a> via changes in the alloy mole ratios, <i>x</i> and <i>y</i>. </p><p><a href="/facts/Indium_phosphide/IEW8ApM2">Indium phosphide</a>-based <a href="/facts/Photonic_integrated_circuits/C7skzpMo">photonic integrated circuits</a>, or PICs, commonly use alloys of Ga<i>x</i>In1−<i>x</i>As<i>y</i>P1−<i>y</i> to construct <a href="/facts/Quantum_well/q5fc9ACR">quantum wells</a>, <a href="/facts/Waveguides/tJS9Y0GH">waveguides</a> and other photonic structures, lattice matched to an InP substrate, enabling single-crystal epitaxial growth onto InP. </p><p>Many devices operating in the <a href="/facts/Near-infrared/44XdJNcc">near-infrared</a> 1.55 μm wavelength window utilize this alloy, and are employed as optical components (such as <a href="/facts/Laser/jk6PTvvT">laser</a> transmitters, <a href="/facts/Photodetectors/7cSkXS6s">photodetectors</a> and modulators) in <a href="/facts/C_band_(infrared)/6F0EEcDI">C-band</a> communications systems. </p><p><a href="/facts/Fraunhofer_Institute_for_Solar_Energy_Systems/zKWwFJt8">Fraunhofer Institute for Solar Energy Systems</a> ISE reported a <a href="/facts/Triple-junction_solar_cell/hw0qSrCr">triple-junction solar cell</a> utilizing Ga0.93In0.07As0.87P0.13. The cell has very high efficiency of 35.9% (claimed to be a record). </p>