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MEMS sensor generations
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<p>MEMS sensor generations represent the progress made in micro <a href="/facts/Sensor/RN8SXbjs">sensor</a> technology and can be categorized as follows: </p> 1st Generation <a href="/facts/Microelectromechanical_systems/TkhEzDpm">MEMS</a> sensor element mostly based on a <a href="/facts/Silicon/cgWx0hdr">silicon</a> structure, sometimes combined with <a href="/facts/Analog_circuit/Bnlnfwwv">analog</a> amplification on a <a href="/facts/Integrated_circuit/fjn6vg7C">micro chip</a>.<a class="footnote-ref" id="fnref:1" href="#fn:1"><sup>1</sup></a> 2nd Generation MEMS sensor element combined with analog amplification and <a href="/facts/Analog-to-digital_converter/8YYNsMFg">analog-to-digital converter</a> on one micro chip. 3rd Generation Fusion of the sensor element with analog amplification, analog-to-digital converter and <a href="/facts/Digital_data/JChckAvr">digital</a> intelligence for linearization and temperature compensation on the same micro chip. 4th Generation Memory cells for calibration- and temperature compensation data are added to the elements of the 3rd MEMS sensor generation.