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Molecular-beam epitaxy
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<p>Molecular-beam epitaxy (MBE) is an <a href="/facts/Epitaxy/etjSn1D3">epitaxy</a> method for <a href="/facts/Thin-film_deposition/nSeoUT4Q">thin-film deposition</a> of <a href="/facts/Single_crystal/UMG5pFp9">single crystals</a>. MBE is widely used in the manufacture of <a href="/facts/Semiconductor_devices/6W3ryr50">semiconductor devices</a>, including <a href="/facts/Transistor/Bmr8zwL0">transistors</a>. MBE is used to make <a href="/facts/Diode/JyaoyGnk">diodes</a> and <a href="/facts/MOSFET/eTDJT2Km">MOSFETs</a> (MOS <a href="/facts/Field-effect_transistors/TerYC6Nz">field-effect transistors</a>) at <a href="/facts/Microwave/HmVSN31Y">microwave</a> frequencies, and to manufacture the <a href="/facts/Lasers/jk6PTvvT">lasers</a> used to read <a href="/facts/Optical_discs/vjVDB1GH">optical discs</a> (such as <a href="/facts/CDs/g51GRloc">CDs</a> and <a href="/facts/DVDs/7fJsHJrN">DVDs</a>). </p>