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Narrow-gap semiconductor
All semiconductors with bandgaps smaller than that of silicon

Narrow-gap semiconductors are semiconducting materials with a magnitude of bandgap that is smaller than 0.7 eV, which corresponds to an infrared absorption cut-off wavelength over 2.5 micron. A more extended definition includes all semiconductors with bandgaps smaller than silicon (1.1 eV). Modern terahertz, infrared, and thermographic technologies are all based on this class of semiconductors.

Narrow-gap materials made it possible to realize satellite remote sensing, photonic integrated circuits for telecommunications, and unmanned vehicle Li-Fi systems, in the regime of Infrared detector and thermography. They are also the materials basis for terahertz technology, including security surveillance of concealed weapon uncovering, safe medical and industrial imaging with terahertz tomography, as well as dielectric wakefield accelerators. Besides, thermophotovoltaics embedded with narrow-gap semiconductors can potentially use the traditionally wasted portion of solar energy that takes up ~49% of the sun light spectrum. Spacecraft, deep ocean instruments, and vacuum physics setups use narrow-gap semiconductors to achieve cryogenic cooling.

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List of narrow-gap semiconductors

NameChemical formulaGroupsBand gap (300 K)
Mercury cadmium tellurideHg1−xCdxTeII-VI0 to 1.5 eV
Mercury zinc tellurideHg1−xZnxTeII-VI0.15 to 2.25 eV
Lead selenidePbSeIV-VI0.27 eV
Lead(II) sulfidePbSIV-VI0.37 eV
TeleniumTeVI~0.3 eV
Lead telluridePbTeIV-VI0.32 eV
MagnetiteFe3O4Transition Metal-VI0.14 eV
Indium arsenideInAsIII-V0.354 eV
Indium antimonideInSbIII-V0.17 eV
GermaniumGeIV0.67 eV
Gallium antimonideGaSbIII-V0.67 eV
Cadmium arsenideCd3As2II-V0.5 to 0.6 eV
Bismuth tellurideBi2Te30.21 eV
Tin tellurideSnTeIV-VI0.18 eV
Tin selenideSnSeIV-VI0.9 eV
Silver(I) selenideAg2Se0.07 eV
Magnesium silicideMg2SiII-IV0.79 eV26

See also

Further reading

References

  1. Li, Xiao-Hui (2022). "Narrow-Bandgap Materials for Optoelectronics Applications". Frontiers of Physics. 17 (1): 13304. Bibcode:2022FrPhy..1713304L. doi:10.1007/s11467-021-1055-z. S2CID 237652629. https://link.springer.com/article/10.1007/s11467-021-1055-z ↩

  2. Chu, Junhao; Sher, Arden (2008). Physics and Properties of Narrow Gap Semiconductors. Springer. doi:10.1007/978-0-387-74801-6. ISBN 978-0-387-74743-9. 978-0-387-74743-9 ↩

  3. Jones, Graham A.; Layer, David H.; Osenkowsky, Thomas G. (2007). National Association of Broadcasters Engineering Handbook. Taylor and Francis. p. 7. ISBN 978-1-136-03410-7. 978-1-136-03410-7 ↩

  4. Avraham, M.; Nemirovsky, J.; Blank, T.; Golan, G.; Nemirovsky, Y. (2022). "Toward an Accurate IR Remote Sensing of Body Temperature Radiometer Based on a Novel IR Sensing System Dubbed Digital TMOS". Micromachines. 13 (5): 703. doi:10.3390/mi13050703. PMC 9145132. PMID 35630174. https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9145132 ↩

  5. Hapke B (19 January 2012). Theory of Reflectance and Emittance Spectroscopy. Cambridge University Press. p. 416. ISBN 978-0-521-88349-8. 978-0-521-88349-8 ↩

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  18. Katayama, I.; Akai, R.; Bito, M.; Shimosato, H.; Miyamoto, K.; Ito, H.; Ashida, M. (2010). "Ultrabroadband terahertz generation using 4-N,N-dimethylamino-4′-N′-methyl-stilbazolium tosylate single crystals". Applied Physics Letters. 97 (2): 021105. Bibcode:2010ApPhL..97b1105K. doi:10.1063/1.3463452. ISSN 0003-6951. https://pubs.aip.org/apl/article/97/2/021105/339188/Ultrabroadband-terahertz-generation-using-4-N-N ↩

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