Stanene is a topological insulator, theoretically predicted by Shoucheng Zhang's group at Stanford, which may display dissipationless currents at its edges near room temperature. It is composed of tin atoms arranged in a single layer, in a manner similar to graphene. Stanene got its name by combining stannum (the Latin name for tin) with the suffix -ene used by graphene. Research is ongoing in Germany and China, as well as at laboratories at Stanford and UCLA.
The addition of fluorine atoms to the tin lattice could extend the critical temperature up to 100 °C. This would make it practical for use in integrated circuits to make smaller, faster and more energy efficient computers.
Jan 9 2014See also
Stannenes (Similar name to Stanene)
- Stannane (similar name as Stanene, too)
- Semiconductors
- Topological insulator
- Superconductivity
- Superconductors
External links
- Choi, Charles Q. (December 4, 2013). "Could Atomically Thin Tin Transform Electronics?". Scientific American.
- Johnson, R. Colin (3 December 2013). "Stanene May Be Better Than Graphene". EE Times.
- Myslewski, Rik (4 December 2013). "OHM MY GOD! Move over graphene, here comes '100% PERFECT' stanene". The Register.
- "Tin-based stanene could conduct electricity with 100 percent efficiency". gizmag. 2013-12-01. Retrieved 2013-12-05.
- Vandenberghe, William (2013-10-25). "Quantum Transport for future Nano-CMOS Applications : TFETs and 2D topological insulators" (PDF). University of Texas at Dallas. Retrieved 2014-01-03.
References
DOE/SLAC National Accelerator Laboratory (2013-11-21). "Will 2-D tin be the next super material?". Sciencedaily.com. Retrieved 2014-01-10. https://www.sciencedaily.com/releases/2013/11/131121135635.htm ↩
"Will 2-D tin be the next super material?". Phys.org. 21 November 2013. Retrieved 2014-01-10. http://phys.org/news/2013-11-d-tin-super-material.html ↩
Xu, Yong; Yan, Binghai; Zhang, Hai-Jun; Wang, Jing; Xu, Gang; Tang, Peizhe; Duan, Wenhui; Zhang, Shou-Cheng (2013-09-24). "Large-Gap Quantum Spin Hall Insulators in Tin Films". Physical Review Letters. 111 (13): 136804. arXiv:1306.3008. doi:10.1103/PhysRevLett.111.136804. ISSN 0031-9007. PMID 24116803. S2CID 11310025. https://link.aps.org/doi/10.1103/PhysRevLett.111.136804 ↩
Singh, Ritu (November 24, 2013). "Tin could be the next super material for computer chips". Zeenews. http://zeenews.india.com/news/science/tin-could-be-the-next-super-material-for-computer-chips_892199.html ↩
Markoff, John (January 9, 2014). "Designing the Next Wave of Computer Chips". New York Times. Retrieved January 10, 2014. https://www.nytimes.com/2014/01/10/science/designing-the-next-wave-of-computer-chips.html ↩
"Will 2-D Tin be the Next Super Material?" (Press release). Stanford University: SLAC National Accelerator Laboratory. November 21, 2013. https://www6.slac.stanford.edu/news/2013-11-21-tin-super-material-stanene.aspx ↩