The materials basis for infrared detection devices are narrow-gap semiconductors, including compounds and alloys of bismuth, antimony, indium, cadmium, selenium and others.23
Avraham, M.; Nemirovsky, J.; Blank, T.; Golan, G.; Nemirovsky, Y. (2022). "Toward an Accurate IR Remote Sensing of Body Temperature Radiometer Based on a Novel IR Sensing System Dubbed Digital TMOS". Micromachines. 13 (5): 703. doi:10.3390/mi13050703. PMC 9145132. PMID 35630174. https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9145132 ↩
Li, Xiao-Hui (2022). "Narrwo-Bandgap Materials for Optoelectronics Applications". Frontiers of Physics. 17 (1): 13304. Bibcode:2022FrPhy..1713304L. doi:10.1007/s11467-021-1055-z. S2CID 237652629. https://link.springer.com/article/10.1007/s11467-021-1055-z ↩
Chu, Junhao; Sher, Arden (2008). Physics and Properties of Narrow Gap Semiconductors. Springer. doi:10.1007/978-0-387-74801-6. ISBN 9780387747439. 9780387747439 ↩