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Production

Gallium(I) oxide can be produced by reacting gallium(III) oxide with heated gallium in vacuum:¹

G a 2 O 3 + 4   G a ⟶ 3   G a 2 O {\displaystyle \mathrm {Ga_{2}O_{3}+4\ Ga\longrightarrow 3\ Ga_{2}O} }

It can also be obtained by reacting gallium with carbon dioxide in vacuum at 850 °C.²

2   G a + C O 2 ⟶ G a 2 O + C O {\displaystyle \mathrm {2\ Ga+CO_{2}\longrightarrow Ga_{2}O+CO} }

Gallium(I) oxide is a by-product in the production of gallium arsenide wafers:³⁴

4   G a + S i O 2 ⟶ 2   G a 2 O + S i {\displaystyle \mathrm {4\ Ga+SiO_{2}\longrightarrow 2\ Ga_{2}O+Si} }

Properties

Gallium(I) oxide is a brown-black diamagnetic solid which is resistant to further oxidation in dry air. It starts decomposing upon heating at temperatures above 500 °C, and the decomposition rate depends on the atmosphere (vacuum, inert gas, air).⁵

References

1. Brauer, Georg (1975). Handbuch der Präparativen Anorganischen Chemie. Vol. 3. F. Enke. p. 857. ISBN 3-432-02328-6. 3-432-02328-6 ↩

2. Emeléus, H. J. and Sharpe, A. G. (1963). Advances in Inorganic Chemistry and Radiochemistry. Vol. 5. Academic Press. p. 94. ISBN 008057854-3.{{cite book}}: CS1 maint: multiple names: authors list (link) 008057854-3 ↩

3. Siffert, Paul and Krimmel, Eberhard (2004). Silicon: Evolution and Future of a Technology. Springer. p. 439. ISBN 354040546-1.{{cite book}}: CS1 maint: multiple names: authors list (link) 354040546-1 ↩

4. Chou, L. -J (2007). Nanoscale One-dimensional Electronic and Photonic Devices (NODEPD). The Electrochemical Society. p. 47. ISBN 978-156677574-8. 978-156677574-8 ↩

5. Brauer, Georg (1975). Handbuch der Präparativen Anorganischen Chemie. Vol. 3. F. Enke. p. 857. ISBN 3-432-02328-6. 3-432-02328-6 ↩