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Lattice constant
Physical dimensions of unit cells in a crystal

A lattice constant or lattice parameter is one of the physical dimensions and angles that determine the geometry of the unit cells in a crystal lattice, and is proportional to the distance between atoms in the crystal. A simple cubic crystal has only one lattice constant, the distance between atoms, but, in general, lattices in three dimensions have six lattice constants: the lengths a, b, and c of the three cell edges meeting at a vertex, and the angles α, β, and γ between those edges.

The crystal lattice parameters a, b, and c have the dimension of length. The three numbers represent the size of the unit cell, that is, the distance from a given atom to an identical atom in the same position and orientation in a neighboring cell (except for very simple crystal structures, this will not necessarily be distance to the nearest neighbor). Their SI unit is the meter, and they are traditionally specified in angstroms (Å); an angstrom being 0.1 nanometer (nm), or 100 picometres (pm). Typical values start at a few angstroms. The angles α, β, and γ are usually specified in degrees.

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Introduction

A chemical substance in the solid state may form crystals in which the atoms, molecules, or ions are arranged in space according to one of a small finite number of possible crystal systems (lattice types), each with fairly well defined set of lattice parameters that are characteristic of the substance. These parameters typically depend on the temperature, pressure (or, more generally, the local state of mechanical stress within the crystal),1 electric and magnetic fields, and its isotopic composition.2 The lattice is usually distorted near impurities, crystal defects, and the crystal's surface. Parameter values quoted in manuals should specify those environment variables, and are usually averages affected by measurement errors.

Depending on the crystal system, some or all of the lengths may be equal, and some of the angles may have fixed values. In those systems, only some of the six parameters need to be specified. For example, in the cubic system, all of the lengths are equal and all the angles are 90°, so only the a length needs to be given. This is the case of diamond, which has a = 3.57 Å = 357 pm at 300 K. Similarly, in hexagonal system, the a and b constants are equal, and the angles are 60°, 90°, and 90°, so the geometry is determined by the a and c constants alone.

The lattice parameters of a crystalline substance can be determined using techniques such as X-ray diffraction or with an atomic force microscope. They can be used as a natural length standard of nanometer range.34 In the epitaxial growth of a crystal layer over a substrate of different composition, the lattice parameters must be matched in order to reduce strain and crystal defects.

Volume

The volume of the unit cell can be calculated from the lattice constant lengths and angles. If the unit cell sides are represented as vectors, then the volume is the scalar triple product of the vectors. The volume is represented by the letter V. For the general unit cell

V = a b c 1 + 2 cos ⁡ α cos ⁡ β cos ⁡ γ − cos 2 ⁡ α − cos 2 ⁡ β − cos 2 ⁡ γ . {\displaystyle V=abc{\sqrt {1+2\cos \alpha \cos \beta \cos \gamma -\cos ^{2}\alpha -\cos ^{2}\beta -\cos ^{2}\gamma }}.}

For monoclinic lattices with α = 90°, γ = 90°, this simplifies to

V = a b c sin ⁡ β . {\displaystyle V=abc\sin \beta .}

For orthorhombic, tetragonal and cubic lattices with β = 90° as well, then5

V = a b c . {\displaystyle V=abc.}

Lattice matching

Matching of lattice structures between two different semiconductor materials allows a region of band gap change to be formed in a material without introducing a change in crystal structure. This allows construction of advanced light-emitting diodes and diode lasers.

For example, gallium arsenide, aluminium gallium arsenide, and aluminium arsenide have almost equal lattice constants, making it possible to grow almost arbitrarily thick layers of one on the other one.

Lattice grading

Typically, films of different materials grown on the previous film or substrate are chosen to match the lattice constant of the prior layer to minimize film stress.

An alternative method is to grade the lattice constant from one value to another by a controlled altering of the alloy ratio during film growth. The beginning of the grading layer will have a ratio to match the underlying lattice and the alloy at the end of the layer growth will match the desired final lattice for the following layer to be deposited.

The rate of change in the alloy must be determined by weighing the penalty of layer strain, and hence defect density, against the cost of the time in the epitaxy tool.

For example, indium gallium phosphide layers with a band gap above 1.9 eV can be grown on gallium arsenide wafers with index grading.

List of lattice constants

Lattice constants for various materials at 300 K
MaterialLattice constant (Å)Crystal structureRef.
C (diamond)3.567Diamond (FCC)6
C (graphite)a = 2.461c = 6.708Hexagonal
Si5.431020511Diamond (FCC)78
Ge5.658Diamond (FCC)9
AlAs5.6605Zinc blende (FCC)10
AlP5.4510Zinc blende (FCC)11
AlSb6.1355Zinc blende (FCC)12
GaP5.4505Zinc blende (FCC)13
GaAs5.653Zinc blende (FCC)14
GaSb6.0959Zinc blende (FCC)15
InP5.869Zinc blende (FCC)16
InAs6.0583Zinc blende (FCC)17
InSb6.479Zinc blende (FCC)18
MgO4.212Halite (FCC)19
SiCa = 3.086c = 10.053Wurtzite20
CdS5.8320Zinc blende (FCC)21
CdSe6.050Zinc blende (FCC)22
CdTe6.482Zinc blende (FCC)23
ZnOa = 3.25c = 5.2Wurtzite (HCP)24
ZnO4.580Halite (FCC)25
ZnS5.420Zinc blende (FCC)26
PbS5.9362Halite (FCC)27
PbTe6.4620Halite (FCC)28
BN3.6150Zinc blende (FCC)29
BP4.5380Zinc blende (FCC)30
CdSa = 4.160c = 6.756Wurtzite31
ZnSa = 3.82c = 6.26Wurtzite32
AlNa = 3.112c = 4.982Wurtzite33
GaNa = 3.189c = 5.185Wurtzite34
InNa = 3.533c = 5.693Wurtzite35
LiF4.03Halite
LiCl5.14Halite
LiBr5.50Halite
LiI6.01Halite
NaF4.63Halite
NaCl5.64Halite
NaBr5.97Halite
NaI6.47Halite
KF5.34Halite
KCl6.29Halite
KBr6.60Halite
KI7.07Halite
RbF5.65Halite
RbCl6.59Halite
RbBr6.89Halite
RbI7.35Halite
CsF6.02Halite
CsCl4.123Caesium chloride
CsBr4.291Caesium chloride
CsI4.567Caesium chloride
Al4.046FCC36
Fe2.856BCC37
Ni3.499FCC38
Cu3.597FCC39
Mo3.142BCC40
Pd3.859FCC41
Ag4.079FCC42
W3.155BCC43
Pt3.912FCC44
Au4.065FCC45
Pb4.920FCC46
V3.0399BCC
Nb3.3008BCC
Ta3.3058BCC
TiN4.249Halite
ZrN4.577Halite
HfN4.392Halite
VN4.136Halite
CrN4.149Halite
NbN4.392Halite
TiC4.328Halite47
ZrC0.974.698Halite48
HfC0.994.640Halite49
VC0.974.166Halite50
NbC0.994.470Halite51
TaC0.994.456Halite52
Cr3C2a = 11.47b = 5.545c = 2.830Orthorhombic53
WCa = 2.906c = 2.837Hexagonal54
ScN4.52Halite55
LiNbO3a = 5.1483c = 13.8631Hexagonal56
KTaO33.9885Cubic perovskite57
BaTiO3a = 3.994c = 4.034Tetragonal perovskite58
SrTiO33.98805Cubic perovskite59
CaTiO3a = 5.381b = 5.443c = 7.645Orthorhombic perovskite60
PbTiO3a = 3.904c = 4.152Tetragonal perovskite61
EuTiO37.810Cubic perovskite62
SrVO33.838Cubic perovskite63
CaVO33.767Cubic perovskite64
BaMnO3a = 5.673c = 4.71Hexagonal65
CaMnO3a = 5.27b = 5.275c = 7.464Orthorhombic perovskite66
SrRuO3a = 5.53b = 5.57c = 7.85Orthorhombic perovskite67
YAlO3a = 5.179b = 5.329c = 7.37Orthorhombic perovskite68

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